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TC1014/TC1015/TC1185
50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass
Features
* Extremely Low Supply Current (50A, Typ.) * Very Low Dropout Voltage * Choice of 50mA (TC1014), 100mA (TC1015) and 150mA (TC1016) Output * High Output Voltage Accuracy * Standard or Custom Output Voltages * Power Saving Shutdown Mode * Reference Bypass Input for Ultra Low-Noise Operation * Over Current and Over Temperature Protection * Space-Saving 5-Pin SOT-23A Package * Pin Compatible Upgrades for Bipolar Regulators
Device Selection Table
Part Number TC1014-xxVCT TC1015-xxVCT TC1185-xxVCT Package 5-Pin SOT-23A 5-Pin SOT-23A 5-Pin SOT-23A Junction Temp. Range -40C to +125C -40C to +125C -40C to +125C
NOTE: xx indicates output voltages. Available output voltages: 1.8, 2.5, 2.6, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0. Other output voltages are available. Please contact Microchip Technology Inc. for details.
Package Type
5-Pin SOT-23A
VOUT 5 Bypass 4
Applications
* * * * * * * Battery Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulator for SMPS Pagers
TC1014 TC1015 TC1185
1 VIN 2 GND 3 SHDN
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
2002 Microchip Technology Inc.
DS21335B-page 1
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TC1014/TC1015/TC1185
General Description
The TC1014/TC1015/TC1185 are high accuracy (typically 0.5%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices' CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). The devices' key features include ultra low noise operation (plus optional Bypass input), fast response to step changes in load, and very low dropout voltage - typically 85mV (TC1014); 180mV (TC1015); and 270mV (TC1185) at full load. Supply current is reduced to 0.5A (max) and VOUT falls to zero when the shutdown input is low. The devices incorporate both over-temperature and over-current protection. The TC1014/TC1015/TC1185 are stable with an output capacitor of only 1F and have a maximum output current of 50mA, 100mA and 150mA, respectively. For higher output current regulators, please see the TC1107/TC1108/TC1173 (IOUT = 300mA) data sheets.
Typical Application
VIN 1 VIN VOUT 5 + 1F VOUT
2
TC1014 TC1015 TC1185
GND
3 SHDN Bypass
4 470pF Reference Bypass Cap (Optional)
Shutdown Control (from Power Control Logic)
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DS21335B-page 2
2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
1.0 ELECTRICAL CHARACTERISTICS
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V Output Voltage ...........................(-0.3V) to (VIN + 0.3V) Power Dissipation ............... Internally Limited (Note 7) Maximum Voltage on Any Pin .........VIN +0.3V to -0.3V Operating Temperature Range ......-40C < TJ < 125C Storage Temperature ......................... -65C to +150C
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VR + 1V, IL = 100A, CL = 3.3F, SHDN > VIH, TA = 25C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40C to +125C. Symbol
VIN IOUTMAX
Parameter
Input Operating Voltage Maximum Output Current
Min
2.7 50 100 150 VR - 2.5% -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ
-- -- -- -- 20 40 0.05 0.5 0.5 2 65 85 180 270 50 0.05 64 300 0.04 160 10 600
Max
6.0 -- -- -- -- -- 0.35 2 3 -- -- 120 250 400 80 0.5 -- 450 -- -- -- --
Units
V mA
Device
Test Conditions
Note 1
TC1014 TC1015 TC1185 Note 2 Note 3 (VR + 1V) VIN 6V TC1014; TC1015 IL = 0.1mA to IOUTMAX IL = 0.1mA to IOUTMAX TC1185 (Note 4) IL = 100A IL = 20mA IL = 50mA TC1015; TC1185 IL = 100mA IL = 150mA (Note 5) TC1185 SHDN = VIH, IL = 0 SHDN = 0V FRE 1kHz VOUT = 0V Notes 6, 7
VOUT TCVOUT VOUT/VIN
Output Voltage VOUT Temperature Coefficient Line Regulation
VR 0.5% VR + 2.5%
V ppm/C % %
VOUT/VOUT Load Regulation
VIN-VOUT
Dropout Voltage
mV
IIN IINSD PSRR IOUTSC VOUT/PD TSD TSD eN
Supply Current (Note 8) Shutdown Supply Current Power Supply Rejection Ratio Output Short Circuit Current Thermal Regulation Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis Output Noise
A A dB mA V/W C C nV/Hz
IL = IOUTMAX, F = 10kHz 470pF from Bypass to GND
Note
1: 2: 3: 4:
5: 6: 7:
8:
The minimum VIN has to meet two conditions: VIN 2.7V and VIN VR + VDROPOUT. VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX - VOUTMIN)x 10 6 VOUT x T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Apply for Junction Temperatures of -40C to +85C.
2002 Microchip Technology Inc.
DS21335B-page 3
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TC1014/TC1015/TC1185
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = VR + 1V, IL = 100A, CL = 3.3F, SHDN > VIH, TA = 25C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40C to +125C. Symbol
SHDN Input VIH VIL
Note 1: 2: 3: 4:
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input High Threshold SHDN Input Low Threshold
45 --
-- --
-- 15
%VIN %VIN
VIN = 2.5V to 6.5V VIN = 2.5V to 6.5V
5: 6: 7:
8:
The minimum VIN has to meet two conditions: VIN 2.7V and VIN VR + VDROPOUT . VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX - VOUTMIN)x 10 6 VOUT x T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Apply for Junction Temperatures of -40C to +85C.
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DS21335B-page 4
2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
Pin No. (5-Pin SOT-23A) 1 2 3
PIN FUNCTION TABLE
Symbol VIN GND SHDN Unregulated supply input. Ground terminal. Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero, ERROR is open circuited and supply current is reduced to 0.5A (max). Reference bypass input. Connecting a 470pF to this input further reduces output noise. Regulated voltage output. Description
4 5
Bypass VOUT
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DS21335B-page 5
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TC1014/TC1015/TC1185
3.0 DETAILED DESCRIPTION
3.1 Bypass Input
The TC1014/TC1015/TC1185 are precision fixed output voltage regulators. (If an adjustable version is desired, please see the TC1070/TC1071/TC1187 data sheet.) Unlike bipolar regulators, the TC1014/TC1015/ TC1185 supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire 0mA to IOUTMAX operating load current ranges (an important consideration in RTC and CMOS RAM battery back-up applications). Figure 3-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and shutdown (disabled) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05A (typical), VOUT falls to zero volts. A 470pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied.
3.2
Output Capacitor
FIGURE 3-1:
TYPICAL APPLICATION CIRCUIT
VIN VOUT VOUT + 1F
+ 1F + Battery
A 1F (min) capacitor from VOUT to ground is required. The output capacitor should have an effective series resistance greater than 0.1 and less than 5. A 1F capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30C, solid tantalums are recommended for applications operating below -25C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques.
TC1014 TC1015 TC1185
GND
SHDN
Bypass 470pF Reference Bypass Cap (Optional)
Shutdown Control (to CMOS Logic or Tie to VIN if unused)
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DS21335B-page 6
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TC1014/TC1015/TC1185
4.0
4.1
THERMAL CONSIDERATIONS
Thermal Shutdown
Equation 4-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 3.0V +10% VOUTMIN = 2.7V - 2.5% ILOADMAX = 40mA TJMAX TAMAX = 125C = 55C
Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160C. The regulator remains off until the die temperature drops to approximately 150C.
4.2
Power Dissipation
The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation:
Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD (VINMAX - VOUTMIN)ILOADMAX = [(3.0 x 1.1) - (2.7 x .975)]40 x 10-3 = 26.7mW Maximum allowable power dissipation: PDMAX = (TJMAX - TAMAX) JA = (125 - 55) 220 = 318mW In this example, the TC1014 dissipates a maximum of 26.7mW; below the allowable limit of 318mW. In a similar manner, Equation 4-1 and Equation 4-2 can be used to calculate maximum current and/or input voltage limits.
EQUATION 4-1:
PD (VINMAX - VOUTMIN)ILOADMAX Where: PD = VINMAX = VOUTMIN = ILOADMAX = Worst case actual power dissipation Maximum voltage on VIN Minimum regulator output voltage Maximum output (load) current
The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (JA). The 5-Pin SOT-23A package has a JA of approximately 220C/Watt.
EQUATION 4-2:
PDMAX = (TJMAX - TAMAX) JA Where all terms are previously defined.
4.3
Layout Considerations
The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower JA and therefore increase the maximum allowable power dissipation limit.
2002 Microchip Technology Inc.
DS21335B-page 7
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TC1014/TC1015/TC1185
5.0
Note:
TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C) The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Dropout Voltage vs. Temperature
0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 -40 -20 0 20 50 TEMPERATURE (C) 70 125 CIN = 1F COUT = 1F
Dropout Voltage vs. Temperature
0.100 DROPOUT VOLTAGE (V) 0.090 0.080 0.070 0.060 0.050 0.040 0.030 0.020 0.010 0.000
CIN = 1F COUT = 1F VOUT = 3.3V ILOAD = 50mA
DROPOUT VOLTAGE (V)
VOUT = 3.3V ILOAD = 10mA
-40
-20
0 20 50 TEMPERATURE (C)
70
125
Dropout Voltage vs. Temperature
0.200 0.180 DROPOUT VOLTAGE (V) 0.160 0.140 0.120 0.100 0.080 0.060 0.040 0.020 0.000
CIN = 1F COUT = 1F VOUT = 3.3V ILOAD = 100mA
DROPOUT VOLTAGE (V) 0.300 0.250 0.200 0.150 0.100 0.050 0.000
Dropout Voltage vs. Temperature
VOUT = 3.3V ILOAD = 150mA
CIN = 1F COUT = 1F
-40
-20
0 20 50 TEMPERATURE (C)
70
125
-40
-20
0 20 50 TEMPERATURE (C)
70
125
Ground Current vs. VIN
90 80 GND CURRENT (A) 70 60 50 40 30 20 10 0
CIN = 1F COUT = 1F VOUT = 3.3V ILOAD = 10mA
GND CURRENT (A)
90 80 70 60 50 40 30 20 10 0
Ground Current vs. VIN
VOUT = 3.3V ILOAD = 100mA
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V)
CIN = 1F COUT = 1F
1 1.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 3.5 4 5 5.5 7.5 VIN (V)
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DS21335B-page 8
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TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C)
Ground Current vs. VIN
80 70 GND CURRENT (A) 60
VOUT (V)
VOUT vs. VIN
3.5 3 2.5 2 1.5 1
VOUT = 3.3V ILOAD = 0
VOUT = 3.3V ILOAD = 150mA
50 40 30 20 10 0
CIN = 1F COUT = 1F
0.5 0
CIN = 1F COUT = 1F
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 2.5 3.5 4.5 5.5 6.5 7 VIN (V)
3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 0.5 1 1.5 5 5.5 6 6.5 7 VIN (V)
VOUT vs. VIN
3.5 3.0 2.5
VOUT (V)
VOUT = 100mA ILOAD = 3.3V ILOAD = 100mA
Output Voltage vs. Temperature
3.320 3.315 3.310 3.305 VOUT = 3.3V ILOAD = 10mA
VOUT (V)
2.0 1.5 1.0 0.5 0.0
0
CIN = 1F COUT = 1F
3.300 3.295 3.290 3.285 3.280 3.275 -40 CIN = 1F COUT = 1F VIN = 4.3V -20 -10 0 20 40 TEMPERATURE (C) 85 125
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V)
Output Voltage vs. Temperature
3.290 3.288 3.286 VOUT (V) 3.284 3.282 3.280 3.278 3.276 3.274
CIN = 1F COUT = 1F VIN = 4.3V VOUT = 3.3V ILOAD = 150mA
-40
-20
-10 0 20 40 TEMPERATURE (C)
85
125
2002 Microchip Technology Inc.
DS21335B-page 9
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TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C)
Output Voltage vs. Temperature
5.025 5.020 5.015
Output Voltage vs. Temperature
4.994 4.992 4.990 4.988
VOUT (V)
VOUT = 5V ILOAD = 150mA
VOUT = 5V ILOAD = 10mA
VOUT (V)
5.010 5.005 5.000 4.995 4.990 4.985
4.986 4.984 4.982 4.980 4.978 4.976 4.974 -40 -20 -10 0 20 40 TEMPERATURE (C) 85 125
CIN = 1F COUT = 1F VIN = 6V
CIN = 1F COUT = 1F VIN = 6V
-40 -20 -10 0 20 40 85 125
TEMPERATURE (C)
Temperature vs. Quiescent Current
70
GND CURRENT (A)
Temperature vs. Quiescent Current
80 70 60 50 40 30 20 10 0
CIN = 1F COUT = 1F VIN = 6V VOUT = 5V ILOAD = 150mA
60
GND CURRENT (A)
VOUT = 5V ILOAD = 10mA
50 40 30 20 10 0
CIN = 1F COUT = 1F VIN = 6V
-40
-20
-10 0 20 40 TEMPERATURE (C)
85
125
-40
-20
-10 0 20 40 TEMPERATURE (C)
85
125
Output Noise vs. Frequency
10.0 RLOAD = 50 COUT = 1F CIN = 1F CBYP = 0 COUT ESR ()
Stability Region vs. Load Current
1000 COUT = 1F to 10F -30 -35 -40 -45 PSRR (dB) -50 -55 -60 -65 0.1 -70 -75
Power Supply Rejection Ratio
IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1F
100 10 1 Stable Region
NOISE (V/Hz)
1.0
0.1
0.0 0.01K 0.1K
0.01 1K 10K 100K 1000K FREQUENCY (Hz) 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA)
-80 0.01K 0.1K
1K 10K 100K 1000K FREQUENCY (Hz)
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DS21335B-page 10
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TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Rise Time = 184S
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Rise Time = 448S
VSHDN
VSHDN
VOUT
VOUT
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 50mA VIN = 4.3V, Temp = 25C, Fall Time = 100S
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Fall Time = 52S
VSHDN
VSHDN
VOUT
VOUT
2002 Microchip Technology Inc.
DS21335B-page 11
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TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Rise Time = 192S
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Rise Time = 390S
VSHDN
VSHDN
VOUT
VOUT
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 50mA VIN = 6V, Temp = 25C, Fall Time = 167S
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Fall Time = 88S
VSHDN
VSHDN
VOUT
VOUT
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TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Load Regulation of 3.3V LDO
Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
Load Regulation of 3.3V LDO
Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
ILOAD
ILOAD
VOUT
VOUT
Load Regulation of 3.3V LDO
Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
Line Regulation of 3.3V LDO
Conditions: VIN = 4V, + 1V Squarewave @2.5kHz
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VIN
VOUT
VOUT
CIN = 0F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled
2002 Microchip Technology Inc.
DS21335B-page 13
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TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Line Regulation of 5.0V LDO
Conditions: VIN = 6V, + 1V Squarewave @2.5kHz
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, CIN = 0F, COUT = 1F
VIN
VOUT
VOUT
CIN = 0F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled
ILOAD was increased until temperature of die reached about 160C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160C. The regulator remains off until die temperature drops to approximately 150C.
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2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
"1" & "2" = part number code + temperature range and voltage (V) 1.8 2.5 2.6 2.7 2.8 2.85 3.0 3.3 3.6 4.0 5.0 TC1014 Code AY A1 NB A2 AZ A8 A3 A5 A9 A0 A7 TC1015 Code BY B1 BT B2 BZ B8 B3 B5 B9 B0 B7 TC1185 Code NY N1 NT N2 NZ N8 N3 N5 N9 N0 N7
"3" represents date code "4" represents lot ID number
6.2
Taping Form
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
User Direction of Feed
Device Marking
W
PIN 1
P Standard Reel Component Orientation TR Suffix Device (Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A
8 mm
4 mm
3000
7 in
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DS21335B-page 15
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TC1014/TC1015/TC1185
6.3 Package Dimensions
SOT-23A-5
.075 (1.90) REF.
.122 (3.10) .098 (2.50) .020 (0.50) .012 (0.30) PIN 1 .122 (3.10) .106 (2.70) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00)
.071 (1.80) .059 (1.50)
.037 (0.95) REF.
10 MAX. .024 (0.60) .004 (0.10)
.010 (0.25) .004 (0.09)
Dimensions: inches (mm)
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TC1014/TC1015/TC1185
Sales and Support
Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21335B-page17
TC1014/TC1015/TC1185
NOTES:
DS21335B-page18
2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company's quality system processes and procedures are QS-9000 compliant for its PICmicro (R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21335B-page 19
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WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com
ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Japan
Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456
China - Beijing
Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104
Korea
Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934
Atlanta
500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307
Singapore
Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850
Boston
2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821
China - Chengdu
Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599
Taiwan
Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Chicago
333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924
China - Fuzhou
Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521
EUROPE
Denmark
Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910
Detroit
Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260
China - Shanghai
Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Kokomo
2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387
France
Microchip Technology SARL Parc d'Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Los Angeles
18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338
China - Shenzhen
Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086
New York
150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335
Germany
Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
San Jose
Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
China - Hong Kong SAR
Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431
Italy
Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883
Toronto
6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O'Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062
United Kingdom
Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
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DS21335B-page 20
2002 Microchip Technology Inc.
*B53312SD*

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